Electrical and Optical Characteristics of Blue Light Emitting Transistors with an InGaN Single Quantum Well

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

Fri. Mar 13, 2015 8:30 AM - 1:00 PM B1 (6B-101)

11:30 AM - 11:45 AM

〇Junichi Nishinaka¹, Kazuhide Kumakura¹, Hideki Yamamoto¹ (1.NTT BRL)

Keywords:InGaN,light emitting transistor,heterojunction bipolar transistor