The 62nd JSAP Spring Meeting, 2015

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15 Crystal Engineering » 15.6 Group IV Compound Semiconductors

[13a-B4-1~10] 15.6 Group IV Compound Semiconductors

Fri. Mar 13, 2015 9:00 AM - 11:45 AM B4 (6B-104)

11:30 AM - 11:45 AM

[13a-B4-10] Interfacial Properties near Conduction Band Edge in SiO2/SiC MOS Structures II

〇Wakana takeuchi1, Kensaku Yamamoto2, Mitsuo Sakashita1, Takashi Kanemura2, Osamu Nakatsuka1, Shigeaki Zaima1, 3 (1.Grad. Sc. of Eng., Nagoya Univ., 2.DENSO CORPORATION, 3.ESI, Nagoya Univ.)

Keywords:SiC,MOS structure,Interfacial properties