Detection of Interface Defects in Thermally-grown SiO<sub>2</sub>/SiC by Cathodoluminescence

Presentation information

Oral presentation

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors

Fri. Mar 13, 2015 9:00 AM - 11:45 AM B4 (6B-104)

10:45 AM - 11:00 AM

〇Yuta Fukushima¹, Atthawut Chanthaphan¹, Daisuke Nagai¹, Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ.)

Keywords:SiC,Cathodoluminescence,Oxide