The 62nd JSAP Spring Meeting, 2015

Presentation information

Print

Oral presentation

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors

[13a-B4-1~10] 15.6 Group IV Compound Semiconductors

Fri. Mar 13, 2015 9:00 AM - 11:45 AM B4 (6B-104)

11:00 AM - 11:15 AM

[13a-B4-8] Dfects in 4H-SiC MOSFETs studied by Capacitively Detected Magnetic Resonance

〇(M1)Yohei Kagoyama1, Mitsuo Okamoto2, Ryoji Kosugi2, Shinsuke Harada2, Takahiro Maikno3, Takeshi Oshima3, Takahide Umeda1 (1.Univ. of Tsukuba, 2.AIST, 3.JAEA)

Keywords:4H-SiC,MOSFET,ESR