[13a-B4-1~10] 15.6 Group IV Compound Semiconductors

▲ [13a-B4-9] Electrically Detected Magnetic Resonance (EDMR) Study on Interface Defects in C-face 4H-SiC Metal-Oxide-Semi-conductor Field Effect Transistors

〇(B)GEONWOO KIM¹, Shijie Ma¹, Ryo Arai¹, Mitsuo Okamoto², Shinsuke Harada², Takahiro Makino³, Takeshi Ohshima³, Takahide Umeda¹ (1.Univ. of Tsukuba, 2.AIST, 3.JAEA)

Keywords:4H-SiC,MOS interface defect,ESR