The 62nd JSAP Spring Meeting, 2015

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6 Thin Films and Surfaces » 6.3 Oxide electronics

[13a-D10-1~10] 6.3 Oxide electronics

Fri. Mar 13, 2015 9:00 AM - 11:45 AM D10 (16-305)

11:15 AM - 11:30 AM

[13a-D10-9] Operation Mechanism of VO2 Mott Transistors with A TiO2 Solid-State Gate Insulator

〇Takeaki Yajima1, 2, Tomonori Nishimura1, 2, Akira Toriumi1, 2 (1.Univ. of Tokyo, 2.JST-CREST)

Keywords:Schottky junction,high-k,Metal-insulator transition