[13a-P18-1~22] Joint Session K （Poster）

[13a-P18-19] Analysis of Interfacial Property in Highly Reliable Oxide Thin Film Transistor with Fluorinated Silicon Nitride Gate Insulator

〇(DC)Haruka Yamazaki¹, Yasuaki Ishikawa¹, Mami Fujii¹, Eiji Takahashi², Yasunori Andoh², Yukiharu Uraoka¹ (1.NAIST, 2.Nissin Electric)

Keywords:a-InGaZnO,Thin Film Transistor,fluorine