The 62nd JSAP Spring Meeting, 2015

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13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[13p-A25-1~12] 13.2 Exploratory Materials, Physical Properties, Devices

Fri. Mar 13, 2015 4:15 PM - 7:15 PM A25 (6A-218)

5:30 PM - 5:45 PM

[13p-A25-6] Electrical properties of silicide semiconducting films composed of W-encapsulating Si clusters

〇Naoya Okada1, 2, Noriyuki Uchida2, Toshihiko Kanayama2 (1.JST, PRESTO, 2.AIST)

Keywords:Silicide semiconductor,Electrical properties,metal/semiconductor contact