The 62nd JSAP Spring Meeting, 2015

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15 Crystal Engineering » 15.4 III-V-group nitride crystals

[13p-B1-1~7] 15.4 III-V-group nitride crystals

Fri. Mar 13, 2015 4:15 PM - 6:00 PM B1 (6B-101)

5:30 PM - 5:45 PM

[13p-B1-6] Characterization of InGaN based Devices on GaN Substrates by X-Ray Microbeam

〇Toshiya Yokogawa1, Takuya Kakoi1, Yasuhiko Imai2, Shigeru Kimura2 (1.Yamaguchi Univ., 2.JASRI)

Keywords:semiconductor,InGaN,X-ray diffraction