[13p-B4-1~9] 15.6 Group IV Compound Semiconductors

[13p-B4-4] Systematic investigation on in-plane anisotropy of channel mobility of metal-oxide-semiconductor field-effect-transistors on Si-, a- and m-face 4H-SiC

〇Keiko Ariyoshi^{1, 2}, Ryosuke Iijima², Shinsuke Harada^{1, 3}, Kazutoshi Kojima^{1, 3}, Junji Senzaki^{1, 3}, Tanaka Yasunori^{1, 3}, Kazuto Takao², Takashi Shinohe^{1, 2} (1.FUPET, 2.TOSHIBA, 3.AIST)

Keywords:SiC,MOSFET,Mobility