Luminescence properties of GaAsN alloy grown by surface nitridation

Presentation information

Oral presentation

15 Crystal Engineering » 15.3 III-V-group epitaxial crystals

Fri. Mar 13, 2015 4:15 PM - 7:00 PM D4 (16-204)

4:30 PM - 4:45 PM

〇Noriyuki Urakami¹, Keisuke Yamane¹, Hiroto Sekiguchi¹, Hiroshi Okada^1,², Akihiro Wakahara¹ (1.Toyohashi Tech., 2.EIIRIS)

Keywords:dilute nitride semiconductor