The 62nd JSAP Spring Meeting, 2015

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15 Crystal Engineering » 15.3 III-V-group epitaxial crystals

[13p-D4-1~11] 15.3 III-V-group epitaxial crystals

Fri. Mar 13, 2015 4:15 PM - 7:00 PM D4 (16-204)

5:30 PM - 5:45 PM

[13p-D4-6] Growth of InGaAs/GaAs MQW on Si substrate by using MOVPE grown Ge buffer layer

〇Ryo Nakao1, 2, Masakazu Arai1, 2, Tsuyoshi Yamamoto1, Shinji Matsuo1, 2 (1.NTT Device Technology Labs., 2.Nanophotonics Center)

Keywords:quantum well,germanium