[13p-P11-1~16] 8.7 Plasma phenomena, emerging area of plasmas and their new applications

[13p-P11-14] Solid Phase Epitaxial Method of a-Si Films Using Selective Heating Phenomena of W and/or Ni under Hydrogen Radical Irradiation and Its Application to TFT Fabrication

〇(M1)kazuki kamimura¹, Tetsuji Arai¹, Keisuke Arimoto¹, Junji Yamanaka¹, Tetsuya Sato¹, Hiroki Nakaie¹, Kiyokazu Nakagawa¹, Toshiyuki Takamatsu², Kentarou Sawano³ (1.Univ. of Yamanashi, 2.SST Inc., 3.Tokyo City Univ.)

Keywords:hydrogen radical,thin film transistor,solid phase epitaxial method