[13p-P17-1~24] 13.8 Compound and power electron devices and process technology

△ [13p-P17-12] Monolithic power integrated circuit on GaN-based Polarization-Junction platform

〇Rei Kayanuma¹, Shunsuke Kubota¹, Akira Nakajima³, Shin-ichi Nishizawa³, Hiromichi Ohashi^{2, 3}, Kazuo Tsutsui¹, Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Hiroshi Iwai² (1.Tokyo Tech. IGSSE, 2.Tokyo Tech. FRC, 3.AIST)

Keywords:GaN,HFET,power integrated circuit