[13p-P17-1~24] 13.8 Compound and power electron devices and process technology

[13p-P17-15] Electrical Characterization of AlGaN/GaN Hetero-Structures Treated by CF₄ Plasma

〇Yoshitaka Nakano¹, Retsuo Kawakami², Masahito Niibe³, Kenji Takagi¹, Tatsuo Shirahama², Takashi Mukai⁴ (1.Chubu Univ., 2.Univ. Tokushima, 3.Univ. Hyogo, 4.Nichia Corp.)

Keywords:AlGaN/GaN Heterostructure,CF4 Plasma,Deep-Level Defects