The 62nd JSAP Spring Meeting, 2015

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13 Semiconductors » 13.8 Compound and power electron devices and process technology

[13p-P17-1~24] 13.8 Compound and power electron devices and process technology

Fri. Mar 13, 2015 4:30 PM - 6:30 PM P17 (Gymnasium)

4:30 PM - 6:30 PM

[13p-P17-16] Effects of dry etching on Al2O3/AlGaN/GaN MOS interface properties

〇Zenji Yatabe1, 2, Joji Ohira1, Taketomo Sato1, Tamotsu Hashizume1, 2 (1.RCIQE, Hokkaido Univ., 2.JST-CREST)

Keywords:AlGaN/GaN,Interface state,dry etching