The 62nd JSAP Spring Meeting, 2015

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Poster presentation

13 Semiconductors » 13.8 Compound and power electron devices and process technology

[13p-P17-1~24] 13.8 Compound and power electron devices and process technology

Fri. Mar 13, 2015 4:30 PM - 6:30 PM P17 (Gymnasium)

4:30 PM - 6:30 PM

[13p-P17-20] Effect of epitaxial layer in local gate leakage of AlGaN/GaN HEMTs

〇Tomotaka Narita1, Yuichi Fujimoto1, Akio Wakejima1, Takashi Egawa1 (1.Nagoya Inst. of Tech.)

Keywords:GaN,HEMT