The 62nd JSAP Spring Meeting, 2015

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13 Semiconductors » 13.8 Compound and power electron devices and process technology

[13p-P17-1~24] 13.8 Compound and power electron devices and process technology

Fri. Mar 13, 2015 4:30 PM - 6:30 PM P17 (Gymnasium)

4:30 PM - 6:30 PM

△ [13p-P17-22] Evaluation of n+-Si/n-GaN contacts using surface activated bonding

〇(B)takuya nishimura1, jianbo liang1, noriyuki watanabe2, naoteru shigekawa1 (1.Oska City Univ., 2.NTT Labs.)

Keywords:GaN,ohmic contact,low temperature bonding