[13p-P17-1~24] 13.8 Compound and power electron devices and process technology

[13p-P17-24] Uneven structure patterns dependence on reduction of contact resistance formation on AlGaN/GaN high electron mobility transistors by introducing uneven AlGaN layers

〇Tomohiro Shimoda¹, Yusuke Takei¹, Kazuo Tsutsui¹, Wataru Saito², Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Yoshinori Kataoka¹, Hiroshi Iwai¹ (1.Tokyo Inst. Technol, 2.Toshiba)

Keywords:AlGaN,uneven structure,ohmic contact