The 62nd JSAP Spring Meeting, 2015

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Poster presentation

6 Thin Films and Surfaces » 6.3 Oxide electronics

[13p-P5-1~16] 6.3 Oxide electronics

Fri. Mar 13, 2015 4:30 PM - 6:30 PM P5 (Gymnasium)

4:30 PM - 6:30 PM

[13p-P5-4] Formative Mechanism of Conducting Path in Resistive Random Access Memory ~ First-Principles Electronic State Analysis for Various NiO Surfaces ~

〇(D)Takumi Moriyama1, 4, Takahiro Yamasaki2, Takahisa Ohno2, 3, Satoru Kishida1, 4, Kentaro Kinoshita1, 4 (1.Tottori Univ., 2.NIMS, 3.IIS, Univ. of Tokyo, 4.TiFREC)

Keywords:ReRAM,First-principles calculation,Nickel Oxide