Development of in-situ observation method of the SiC surface during thermal decomposition by synchrotron x-ray surface diffraction

Masahiro Yoshida

Presentation information

Oral presentation

7 Beam Technology and Nanofabrication » 7.4 Buried interface sciences with quantum beam

[14a-A16-1~11] 7.4 Buried interface sciences with quantum beam

Sat. Mar 14, 2015 9:00 AM - 12:00 PM A16 (6A-206)

11:15 AM - 11:30 AM

[14a-A16-9] Development of in-situ observation method of the SiC surface during thermal decomposition by synchrotron x-ray surface diffraction

〇(P)Masahiro Yoshida^1,², Fumiya Kawabe¹, Yasunori Kutsuma¹, Daichi Dohjima¹, Hidefumi Shigemasa¹, Kenji Ohwada², Toshiya Inami², Naoto Tamai¹, Noboru Ohtani¹, Tadaaki Kaneko¹, Jun'ichiro Mizuki¹ (1.Kwansei Gakuin Univ., 2.JAEA)

Keywords:synchrotron x-ray diffraction,in-situ observation,graphene on SiC