The 62nd JSAP Spring Meeting, 2015

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Oral presentation

13 Semiconductors » 13.3 Insulator technology

[14a-A24-1~12] 13.3 Insulator technology

Sat. Mar 14, 2015 9:00 AM - 12:15 PM A24 (6A-217)

9:45 AM - 10:00 AM

[14a-A24-4] Comparison of (100) and (110) SiGe MOS interfaces with plasma post-nitridation

〇(D)Jaehoon Han1, 2, Mitsuru Takenaka1, 2, Shinichi Takagi1, 2 (1.Univ. of Tokyo, 2.JST-CREST)

Keywords:SiGe,plasma post-nitridation,(110) orientation