The 62nd JSAP Spring Meeting, 2015

Presentation information

Print

Oral presentation

13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[14a-A25-1~11] 13.2 Exploratory Materials, Physical Properties, Devices

Sat. Mar 14, 2015 9:00 AM - 12:00 PM A25 (6A-218)

9:15 AM - 9:30 AM

[14a-A25-2] Characterization of oxides/BaSi2 interfaces grown on Si(111) by molecular beam epitaxy

〇Hiroki Takeuchi1, Du Weijie1, Takabe Ryouta1, Toko Kaoru1, Hara Kousuke2, Usami Noritaka3, 4, Suemasu Takashi1, 4 (1.Univ. Tsukuba, 2.Univ. Yamanashi, 3.Nagoya Univ., 4.JST-CREST)

Keywords:BaSi2,interface,defect levels