The 62nd JSAP Spring Meeting, 2015

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15 Crystal Engineering » 15.3 III-V-group epitaxial crystals

[14a-D4-1~10] 15.3 III-V-group epitaxial crystals

Sat. Mar 14, 2015 9:00 AM - 11:30 AM D4 (16-204)

11:15 AM - 11:30 AM

▲ [14a-D4-10] Optimization of Growth Temperature of GaAs Nucleation Layer in InAs/GaAs Quantum Dots on Ge/Si substrate by MOCVD

〇Mohan Rajesh1, Masao Nishioka1, Yasuhiko Arakawa1 (1.NanoQuine, The Univ. of Tokyo)

Keywords:Quantum Dots,Ge/Si substrate,MOCVD