[14a-D4-1~10] 15.3 III-V-group epitaxial crystals

[14a-D4-8] Growth of GaP Strain-Compensated InAs/GaAs Quantum Dot and High Temperature LD operation

〇Takeo Kageyama¹, Katsuyuki Watanabe², Vo Quoc Huy², Keizo Takemasa³, Mitsuru Sugawara³, Satoshi Iwamoto^{1, 2}, Yasuhiko Arakawa^{1, 2} (1.NanoQuine, Univ. of Tokyo, 2.IIS, Univ. of Tokyo, 3.QD Laser, Inc.)

Keywords:Quantum Dot,laser diode,strain compensation