The 62nd JSAP Spring Meeting, 2015

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13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[14p-A25-1~4] 13.2 Exploratory Materials, Physical Properties, Devices

Sat. Mar 14, 2015 1:00 PM - 2:00 PM A25 (6A-218)

1:30 PM - 1:45 PM

▼ [14p-A25-3] Fabrication of Ba(Si,C)2 films on Si(111) by plasma-assisted molecular beam epitaxy

〇(B)JAEJUN LEE1, HIROKI TAKEUCHI2, RYOTA TAKABE2, KAORU TOKO1, 2, TAKASHI SUEMASU1, 2, 3 (1.Coll. of engineering sciences, Univ. of Tsukuba, 2.Inst. of Applied Physics, Univ. of Tsukuba, 3.JST-CREST)

Keywords:photovoltaics,silicide