Yutaka Ohno

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Speaker, Author, Co-Author

Thu. Sep 15, 2016 1:00 PM - 6:00 PM A34 (301B)

Oral presentation
| 13 Semiconductors
| 13.10 Compound solar cells

[15p-A34-1~19] 13.10 Compound solar cells

3:30 PM - 3:45 PM

[15p-A34-10] Plane-view TEM of Si/GaAs interfaces fabricated by surface-activated bonding at RT

〇Yutaka Ohno¹, Jianbo Liang², Naoteru Shigekawa² (1.IMR, Tohoku Univ., 2.GSE, Osaka City Univ.)

Thu. Sep 15, 2016 1:15 PM - 6:45 PM A23 (201B)

Oral presentation
| 15 Crystal Engineering
| 15.8 Crystal evaluation, impurities and crystal defects

[15p-A23-1~20] 15.8 Crystal evaluation, impurities and crystal defects

1:15 PM - 1:30 PM

[15p-A23-1] Segregation ability of impurity atoms at large-angle grain boundaries in Si

〇Yutaka Ohno¹, Kaihei Inoue¹, Kozo Fujiwara¹, Kentaro 2utsukake¹, Momoko Deura¹, Ichiro Yonenaga¹, Yasuo Shimizu², Koji Inoue², Naoki Ebisawa², Yasuyoshi Nagai², Hideto Yoshida³, Seiji Takeda³, Shingo Tanaka⁴, Masanori Kohyama⁴ (1.IMR, Tohoku Univ., 2.The Oarai Center, IMR, Tohoku Univ., 3.ISIR, Osaka Univ., 4.AIST)

1:30 PM - 1:45 PM

[15p-A23-2] Impurity segregation at grain boundaries in mono-like Si crystals

〇Yutaka Ohno¹, Kentaro Kutsukake¹, Momoko Deura¹, Ichiro Yonenaga¹, Yasuo Shimizu², Koji Inoue², Naoki Ebisawa², Yasuyoshi Nagai², Hideto Yoshida³, Seiji Takeda³ (1.IMR, Tohoku Univ., 2.The Oarai Center, IMR, Tohoku Univ., 3.ISIR, Osaka Univ.)

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