Hiroyuki Ichikawa

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Speaker, Author, Co-Author

Fri. Sep 16, 2016 1:30 PM - 5:00 PM B1 (Exhibition Hall)

Oral presentation
| 13 Semiconductors
| 13.8 Compound and power electron devices and process technology

[16p-B1-1~13] 13.8 Compound and power electron devices and process technology

4:00 PM - 4:15 PM

[16p-B1-10] Analysis of GaN HEMT Epi Surface Treated with Fluorine-Based Neutral Beam

〇Hiroyuki Ichikawa¹, Shuichi Noda², Isao Makabe¹, Kazutaka Inoue¹, Akio Higo³, Seiji Samukawa^2,3 (1.Transmission Devices Lab., Sumitomo Electric, 2.Inst. Fluid Sci., Tohoku Univ., 3.WPI-AIMR, Tohoku Univ.)

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