HIROYUKI NISHINAKA

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Speaker, Author, Co-Author

Fri. Sep 16, 2016 9:00 AM - 11:45 AM A22 (Main Hall B)

Oral presentation
| Joint Session K "Wide bandgap oxide semiconductor materials and devices"
| Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[16a-A22-1~10] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

10:30 AM - 10:45 AM

[16a-A22-6] Epitaxial growth of ε-Ga₂O₃by mist CVD technique

〇HIROYUKI NISHINAKA¹, MASAHIRO YOSHIMOTO¹ (1.Kyoto Inst. of Tech.)