Shinichi IKE

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Speaker, Author, Co-Author

Fri. Sep 16, 2016 9:00 AM - 11:45 AM D61 (Bandaijima Bldg.)

Oral presentation
| 15 Crystal Engineering
| 15.5 Group IV crystals and alloys

[16a-D61-1~11] 15.5 Group IV crystals and alloys

11:00 AM - 11:15 AM

[16a-D61-9] Epitaxial growth of heavily doped n-Ge layers by MOCVD with in situ P-doping

〇Shinichi IKE^1,2, Wakana Takeuchi¹, Osamu Nakatsuka¹, Shigeaki Zaima^1,3 (1.Grad. Sch. of Eng., Nagoya Univ., 2.JSPS Research Fellow, 3.IMaSS, Nagoya Univ.)

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