Yusuke Fujishima

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Speaker, Author, Co-Author

Thu. Sep 15, 2016 10:00 AM - 12:15 PM B2 (Exhibition Hall)

Oral presentation
| 13 Semiconductors
| 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[15a-B2-1~8] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

11:15 AM - 11:30 AM

△ [15a-B2-5] Formation of the sulfur-terminated Ge(111) surface using HF aq. solution with H₂SO₃

〇Yusuke Fujishima¹, Hitoshi Suzuki¹, Hiroyuki Sakaue¹ (1.Hiroshima Univ.)