Ryo Nakao

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Speaker, Author, Co-Author

Fri. Sep 16, 2016 9:00 AM - 1:00 PM B9 (Exhibition Hall)

Oral presentation
| 15 Crystal Engineering
| 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[16a-B9-1~15] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

9:00 AM - 9:15 AM

△ [16a-B9-1] Effect of annealing on surface roughness of MOVPE-grown Ge layer on vicinal Si

〇Ryo Nakao^1,2, Tsuyoshi Yamamoto¹, Shinji Matsuo^1,2 (1.NTT Device Technology Labs., 2.NTT Nanophotonic Center)