Hidehiro Asai

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Speaker, Author, Co-Author

Thu. Sep 15, 2016 1:45 PM - 5:30 PM B2 (Exhibition Hall)

Oral presentation
| 13 Semiconductors
| 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[15p-B2-1~14] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

4:45 PM - 5:00 PM

[15p-B2-12] Band to Band Tunneling Model Considering Non-Uniform Electric field for Simulation of Tunnel FET

〇Hidehiro Asai¹, Kocihi Fukuda¹, Junichi Hattori¹, Nobuyuki Sano² (1.AIST, 2.Tsukuba Univ.)