16:00 〜 16:15 ▲ [14p-A26-11] Electrical properties of H-terminated diamond field effect transistors with AlN gate material sputter-deposited under Ar+N2 atmosphere 〇RYAN BANAL1、Masataka Imura1、Jiangwei Liu1、Meiyong Liao1、Yasuo Koide1 (1.NIMS)