Akihiro Hashiguchi

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Speaker, Author, Co-Author

Fri. Sep 16, 2016 9:00 AM - 11:45 AM A22 (Main Hall B)

Oral presentation
| Joint Session K "Wide bandgap oxide semiconductor materials and devices"
| Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[16a-A22-1~10] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

9:15 AM - 9:30 AM

△ [16a-A22-2] Relationship of crystal defects and leakage current of β-Ga₂O₃Schottky barrier diodes

〇Akihiro Hashiguchi¹, Tomoya Moribayashi¹, Kenji Hanada¹, Takahito Oshima¹, Toshiyuki Oishi¹, Kimiyoshi Koshi², Kohei Sasaki², Akito Kuramata², Osamu Ueda³, Makoto Kasu¹ (1.Saga Univ., 2.Tamura Corp., 3.Kanazawa Inst. Tech.)