3:45 PM - 4:00 PM
[16p-C302-8] Electrical characteristics of SiC-MOS capacitors with an ALD-deposited SiO2 using TDMAS
〇(B)Takashi Kaneko1, Yiming Lei1, Hitoshi Wakabayashi1, Kazuo Tsutsui2, Hiroshi Iwai2, Kuniyuki Kakushima1, Masayuki Huruhashi3, Shingo Tomohisa3, Satoshi Yamakawa3 (1.Tokyo Tech, 2.Tokyo Tech, IIR, 3.Mitsubishi Electric.)