Oral presentation

9 Applied Materials Science » 9.2 Nanowires and Nanoparticles

[14p-D62-1~20] 9.2 Nanowires and Nanoparticles

Wed. Sep 14, 2016 1:30 PM - 7:00 PM D62 (Bandaijima Bldg.)

Shinjiroh Hara(Hokkaido Univ.), Zhang Guoqiang(NTT), Ishikawa Fumitaro(Ehime Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 1:45 PM

△ [14p-D62-1] Composition Control of InGaAs Nanowires on Si Substrates

〇(M1)Kohei Chiba¹, Katsuhiro Tomioka^1,2, Fumiya Ishizaka¹, Akinobu Yoshida¹, Junichi Motohisa¹ (1.Hokkaido Univ., 2.JST-PRESTO)

1:45 PM - 2:00 PM

[14p-D62-2] Growth of InP/GaInAs/InP heterostructure nanowires by self-catalytic VLS mode

〇(M1)Kohei Takano¹, Keita Asakura¹, Satoshi Yoshimura¹, Katsuaki Ishida¹, Kazuhiko Shimomura¹ (1.Sophia Univ.)

2:00 PM - 2:15 PM

[14p-D62-3] Atomic ordering induced at Au/GaAs(111)B interface

〇Masamitu Takahasi¹, Takuo Sasaki¹ (1.QST)

2:15 PM - 2:30 PM

[14p-D62-4] Structural and optical characterization of wurtzite InP/AlInP core-multishell nanowires

〇Fumiya Ishizaka¹, Yoshihiro Hiraya¹, Katsuhiro Tomioka^1,2, Junichi Motohisa¹, Takashi Fukui¹ (1.GS-IST and RCIQE, Hokkaido Univ., 2.JST-PRESTO)

2:30 PM - 2:45 PM

[14p-D62-5] Optical characteristics by current injection of n-InP/ i-GaInAs/ p-InP core-multishell NWs grown by self-catalytic VLS mode

〇(M2)Keita Asakura¹, Kohei Takano¹, Katsuaki Ishida¹, Satoshi Yoshimura¹, Kazuhiko Shimomura¹ (1.Sophia Univ.)

2:45 PM - 3:00 PM

[14p-D62-6] Room-temperature telecom-band InAs/InP microwire laser by bottom-up approach

〇Guoqiang Zhang^1,2, Masato Takiguchi^1,2, Kouta Tateno^1,2, Hideki Gotoh¹ (1.NTT BRL, 2.NTT NPC)

3:00 PM - 3:15 PM

[14p-D62-7] (Al,Ga)Ox microwire ensembles exhibiting luminescence over the entire visible wavelengths

〇Fumitaro Ishikawa¹, Pierre Corfdir², Uwe Jahn², Oliver Brandt² (1.Ehime Univ., 2.Paul Drude Inst.)

3:30 PM - 3:45 PM

△ [14p-D62-8] Structural and Magnetic Domain Observation of Lateral MnAs Nanowires

〇Ryoma Horiguchi¹, Hiroaki Kato¹, Kyohei Kabamoto¹, Ryutaro Kodaira¹, Shinjiro Hara¹ (1.Hokkaido Univ.)

3:45 PM - 4:00 PM

△ [14p-D62-9] Magnetic Domain Control of MnAs/InAs Heterojunction Nanowires

〇Kyohei Kabamoto¹, Ryutaro Kodaira¹, Shinjiro Hara¹ (1.Hokkaido Univ.)

4:00 PM - 4:15 PM

[14p-D62-10] Photoelectrochemical water splitting performed by VLS-grown GaP nanowires

〇Kouta Tateno^1,2, Ono Yoko³, Kumakura Kazuhide¹ (1.NTT Basic Labs., 2.NTT NPC, 3.NTT Device Technol. Labs.)

4:15 PM - 4:30 PM

[14p-D62-11] Mobility Improvement of GaAs Nanowire TFTs by Reverse Electrolysis Treatment

〇Shinya Aikawa¹, Kohei Yamada¹, Hideki Hashimoto¹, Hidetaka Asoh¹, Sachiko Ono¹ (1.Kogakuin Univ.)

4:30 PM - 4:45 PM

[14p-D62-12] Fabrication and evaluation of SiNP-SiGe_0.3 composite based on neutral beam etching technique

〇AKIOU KIKUCHI^2,4, AKIFUMI YAO⁴, ISAMU MORI⁴, TAKAHITO ONO², SEIJI SAMUKAWA^1,3 (1.IFS, Tohoku Univ., 2.GSE, Tohoku Univ, 3.AIMR, Tohoku Univ., 4.Central Glass)

4:45 PM - 5:00 PM

[14p-D62-13] Electric property of Ge/Si core-shell nanowire at low temperature

〇Hiroyuki Takagi^1,2, Tomohiro Noguchi^1,2, Marolop Simanullang^1,2, Koichi Usami^1,2, Tetsuo Kodera², Shunri Oda^1,2 (1.QNERC, Tokyo Tech, 2.Dept of EE, Tokyo Tech)

5:15 PM - 5:30 PM

[14p-D62-14] Formation of SiO_x nanowires by rapid thermal oxidation method

〇Taisuke Tomino¹, Sho Masuda¹, Akira Koshio¹, Fumio Kokai¹ (1.Mie Univ.)

5:30 PM - 5:45 PM

△ [14p-D62-15] Compositional distribution and electrical property in single crystalline VLS SnO₂nanowire determined by the two crystal growth interfaces

〇Hiroshi Anzai¹, Kazuki Nagashima², Gang Meng², F.W. Zhuge², Katsuichi Kanemoto³, Takehito Seki⁴, Naoya Shibata⁴, Takeshi Yanagida^1,2 (1.Kyushu Univ., 2.IMCE Kyushu Univ., 3.Osaka city Univ., 4.Univ. of Tokyo)

5:45 PM - 6:00 PM

[14p-D62-16] Nanoscale Thermal Management of Oxide Nanowires Toward pico-Joule Energy Consumed High Sensitivity Molecule Sensors

Gang Meng¹, Fuwei Zhuge¹, 〇Kazuki Nagashima¹, Masaki Kanai¹, Tsunaki Takahashi², Ken Uchida², Takeshi Yanagida¹ (1.IMCE, Kyushu Univ., 2.Keio Univ.)

6:00 PM - 6:15 PM

[14p-D62-17] Fabrication of ordered ZnO nanorod array using anodic porous alumina

〇Takashi Nakazono¹, Toshiaki Kondo¹, Takashi Yanagishita¹, Hideki Masuda¹ (1.Tokyo Metropolitan Univ.)

6:15 PM - 6:30 PM

[14p-D62-18] Crystallinity and photocatalytic activity of anodized TiO₂ nanotubes

〇(M2)Kairu Moriai¹, Nobuo Nakajima¹ (1.Hiroshima Univ.)

6:30 PM - 6:45 PM

△ [14p-D62-19] Fabrication of Fe nanowires by chemical vapor deposition and their characterization

〇(M1)Uika Ogihara¹, Takashi Yanase², Taro Nagahama², Kazuki Nagashima³, Takeshi yanagida³, Toshihiro Shimada² (1.Grad. Sch. Chem. Sci. Eng. Hokkaido Univ., 2.Grad. Sch. Eng. Hokkaido Univ., 3.Kyusyu Univ.)

6:45 PM - 7:00 PM

▲ [14p-D62-20] Resistive switching studies of a single silver nanowire junction by multiple-probe AFM

〇(P)Ming Li¹, Yoshitaka Shingaya¹, Rintaro Higuchi¹, Tomonobu Nakayama¹ (1.MANA, NIMS)

Session information

[14p-D62-1~20] 9.2 Nanowires and Nanoparticles

△ [14p-D62-1] Composition Control of InGaAs Nanowires on Si Substrates

[14p-D62-2] Growth of InP/GaInAs/InP heterostructure nanowires by self-catalytic VLS mode

[14p-D62-3] Atomic ordering induced at Au/GaAs(111)B interface

[14p-D62-4] Structural and optical characterization of wurtzite InP/AlInP core-multishell nanowires

[14p-D62-5] Optical characteristics by current injection of n-InP/ i-GaInAs/ p-InP core-multishell NWs grown by self-catalytic VLS mode

[14p-D62-6] Room-temperature telecom-band InAs/InP microwire laser by bottom-up approach

[14p-D62-7] (Al,Ga)Ox microwire ensembles exhibiting luminescence over the entire visible wavelengths

△ [14p-D62-8] Structural and Magnetic Domain Observation of Lateral MnAs Nanowires

△ [14p-D62-9] Magnetic Domain Control of MnAs/InAs Heterojunction Nanowires

[14p-D62-10] Photoelectrochemical water splitting performed by VLS-grown GaP nanowires

[14p-D62-11] Mobility Improvement of GaAs Nanowire TFTs by Reverse Electrolysis Treatment

[14p-D62-12] Fabrication and evaluation of SiNP-SiGe_0.3 composite based on neutral beam etching technique

[14p-D62-13] Electric property of Ge/Si core-shell nanowire at low temperature

[14p-D62-14] Formation of SiO_x nanowires by rapid thermal oxidation method

△ [14p-D62-15] Compositional distribution and electrical property in single crystalline VLS SnO₂nanowire determined by the two crystal growth interfaces

[14p-D62-16] Nanoscale Thermal Management of Oxide Nanowires Toward pico-Joule Energy Consumed High Sensitivity Molecule Sensors

[14p-D62-17] Fabrication of ordered ZnO nanorod array using anodic porous alumina

[14p-D62-18] Crystallinity and photocatalytic activity of anodized TiO₂ nanotubes

△ [14p-D62-19] Fabrication of Fe nanowires by chemical vapor deposition and their characterization

▲ [14p-D62-20] Resistive switching studies of a single silver nanowire junction by multiple-probe AFM

Authentication

Session information

[14p-D62-1~20] 9.2 Nanowires and Nanoparticles

△ [14p-D62-1] Composition Control of InGaAs Nanowires on Si Substrates

△ [14p-D62-8] Structural and Magnetic Domain Observation of Lateral MnAs Nanowires

△ [14p-D62-9] Magnetic Domain Control of MnAs/InAs Heterojunction Nanowires

△ [14p-D62-15] Compositional distribution and electrical property in single crystalline VLS SnO2 nanowire determined by the two crystal growth interfaces

△ [14p-D62-19] Fabrication of Fe nanowires by chemical vapor deposition and their characterization

▲ [14p-D62-20] Resistive switching studies of a single silver nanowire junction by multiple-probe AFM

Authentication

△ [14p-D62-15] Compositional distribution and electrical property in single crystalline VLS SnO₂nanowire determined by the two crystal growth interfaces