[16a-A26-1~7] 13.7 Nano structures and quantum phenomena

Fri. Sep 16, 2016 10:00 AM - 11:45 AM A26 (203-204)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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10:00 AM - 10:15 AM

▲ [16a-A26-1] Analysis of phonon assistance as a function of temperature in inter-band tunneling in 2D Si lateral Esaki diodes

〇Daniel Ioan Moraru¹, Mitsuki Shibuya¹, Ratno Nuryadi², Masahiro Hori¹, Yukinori Ono¹, Michiharu Tabe¹ (1.RIE, Shizuoka Univ., 2.AAAT, Indonesia)

10:15 AM - 10:30 AM

▲ [16a-A26-2] Strain relaxation in submonolayer InAs/GaAs quantum structures

〇Yuwei Zhang¹, Itaru Kamiya¹ (1.Toyota Tech. Inst.)

10:30 AM - 10:45 AM

△ [16a-A26-3] Spin relaxation in Si doped In_0.8Ga_0.2As/Al_0.5Ga_0.5As/AlAs_0.56Sb_0.44 coupled double quantum wells

〇tomoki ishikawa¹, Shin-ichiro Gozu², Teruo Mozume², Shunsuke Ohki¹, Kizuku Yamada¹, Takuya Kamezaki¹, Atsushi Tackeuchi¹ (1.Waseda Univ., 2.AIST)

10:45 AM - 11:00 AM

△ [16a-A26-4] The observation of the spin relaxation in InGaAs quantum well and GaInNAs quantum well

〇Takuya Kamezaki¹, Tomoki Ishikawa¹, Shunsuke Ohki¹, Kizuku Yamada¹, Shulong Lu², Lifeng Bian², Zhichuan Niu³, Astushi Tackeuchi¹ (1.Waseda Univ., 2.SINANO-CAS, 3.I.S.-CAS)

11:00 AM - 11:15 AM

△ [16a-A26-5] Spin relaxation mechanism of GaAs/AlGaAs resonant tunneling bi-quantum-well

〇Yoshiki Nakamura¹, Canyu Jiang¹, Ko Nakayama¹, Masayuki Iida¹, Shima Tanigawa¹, Shunichi Muto², Atsushi Tackeuchi¹ (1.Waseda Univ., 2.Hokkaido Univ)

11:15 AM - 11:30 AM

[16a-A26-6] Investigation of spin dynamics based on initial phase shift of spin precession

Liping Yan², Tetsuyoshi Takamure¹, Reina Kaji¹, 〇Satoru Adachi¹ (1.Hokkaido Univ., 2.Taiyuan Univ. Tech.)

11:30 AM - 11:45 AM

[16a-A26-7] Excitation energy dependence of initial phase shift of resident electron spin polarization precession

〇(M1)Tetsuyoshi Takamure¹, Yan Liping², Kaji Reina¹, Adachi Satoru¹ (1.Hokkaido Univ., 2.Taiyuan Univ. of Technology)

Session information

[16a-A26-1~7] 13.7 Nano structures and quantum phenomena

▲ [16a-A26-1] Analysis of phonon assistance as a function of temperature in inter-band tunneling in 2D Si lateral Esaki diodes

▲ [16a-A26-2] Strain relaxation in submonolayer InAs/GaAs quantum structures

△ [16a-A26-3] Spin relaxation in Si doped In_0.8Ga_0.2As/Al_0.5Ga_0.5As/AlAs_0.56Sb_0.44 coupled double quantum wells

△ [16a-A26-4] The observation of the spin relaxation in InGaAs quantum well and GaInNAs quantum well

△ [16a-A26-5] Spin relaxation mechanism of GaAs/AlGaAs resonant tunneling bi-quantum-well

[16a-A26-6] Investigation of spin dynamics based on initial phase shift of spin precession

[16a-A26-7] Excitation energy dependence of initial phase shift of resident electron spin polarization precession

Authentication

Session information

[16a-A26-1~7] 13.7 Nano structures and quantum phenomena

▲ [16a-A26-1] Analysis of phonon assistance as a function of temperature in inter-band tunneling in 2D Si lateral Esaki diodes

▲ [16a-A26-2] Strain relaxation in submonolayer InAs/GaAs quantum structures

△ [16a-A26-3] Spin relaxation in Si doped In0.8Ga0.2As/Al0.5Ga0.5As/AlAs0.56Sb0.44 coupled double quantum wells

△ [16a-A26-4] The observation of the spin relaxation in InGaAs quantum well and GaInNAs quantum well

△ [16a-A26-5] Spin relaxation mechanism of GaAs/AlGaAs resonant tunneling bi-quantum-well

[16a-A26-6] Investigation of spin dynamics based on initial phase shift of spin precession

[16a-A26-7] Excitation energy dependence of initial phase shift of resident electron spin polarization precession

Authentication

△ [16a-A26-3] Spin relaxation in Si doped In_0.8Ga_0.2As/Al_0.5Ga_0.5As/AlAs_0.56Sb_0.44 coupled double quantum wells