Oral presentation

17 Nanocarbon Technology » 17.2 Graphene

[16a-A33-1~9] 17.2 Graphene

Fri. Sep 16, 2016 9:00 AM - 11:15 AM A33 (301A)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[16a-A33-1] Direct growth of high-quality graphene on sapphire substrate by two-step non-catalyst CVD

〇Yuki Ueda¹, Jumpei Yamada¹, Kyosuke Fujiwara¹, Daichi Yamamoto¹, Takahiro maruyama¹, Shigeya Naritsuka¹ (1.Meijo Univ.)

9:15 AM - 9:30 AM

△ [16a-A33-2] Dominant Factors of Nucleation in CVD Growth of Graphene on a Cu Foil Substrate

〇Takanobu Taira¹, Seiji Obata², Koichiro Saiki^1,2 (1.Grad. Sch. of Sci., The Univ. of Tokyo, 2.Grad. Sch. of Frontier Sci., The Univ. of Tokyo)

9:30 AM - 9:45 AM

△ [16a-A33-3] Low-temperature direct-growth of multilayer graphene by precipitation method using crystallized Ni catalyst

〇Jumpei Yamada¹, Yuki Ueda¹, Kyosuke Hujiwara¹, Daichi Yamamoto¹, Takahiro Maruyama¹, Shigeya Naritsuka¹ (1.Meijo Univ.)

9:45 AM - 10:00 AM

[16a-A33-4] Gas ratio effect on graphene crystallinity in graphene synthesis from graphene oxide via plasma

〇Seiji Obata¹, Koichiro Saiki¹ (1.Univ. of Tokyo)

10:00 AM - 10:15 AM

△ [16a-A33-5] Wafer-Scale Growth and High Density Integration of Suspended Graphene Nanoribbons Array

〇Hiroo Suzuki¹, Kaneko Toshiro¹, Shibuta Yasushi², Ohno Munekazu³, Maekawa Yuki², Kato Toshiaki¹ (1.Tohoku Univ., 2.The Univ. of Tokyo, 3.Hokkaido Univ.)

10:15 AM - 10:30 AM

[16a-A33-6] Raman analysis of graphitic restoration from graphene oxide by ¹³C isotope-labeling

〇Takashi Ishida¹, Atsuki Ohata¹, Shingo Nakamura¹, Yoshihiro Kobayashi¹ (1.Osaka Univ.)

10:30 AM - 10:45 AM

[16a-A33-7] Growth of Graphene/3C-SiC(111)/4H-SiC(0001) by a Sublimation Technique

〇Yoshiaki Sekine¹, Kazuhide Kumakura¹, Hibino Hiroki^1,2 (1.NTT Basic Research Labs., 2.Kwansei Gakuin Univ.)

10:45 AM - 11:00 AM

[16a-A33-8] High-quality graphene growth on Si-terminated SiC single-crystalline
thin films by using the hybrid SiC

〇norifumi Endo¹, Shoji Akiyama², Keiichiro Tashima¹, Maki Suemitsu¹, Shigeru Konishi², Hiroshi Mogi², Makoto Kawai², Yoshihiro Kubota², Koji Horiba³, Hiroshi Kumigashira³, Hirokazu Fukidome¹ (1.RIEC, 2.ShinEtsu, 3.KEK)

11:00 AM - 11:15 AM

△ [16a-A33-9] Direct synthesis of graphene heterostructures using carbon isotopes

〇(M1)Koshi Okuyama¹, Kuniharu Takei¹, Seiji Akita¹, Takayuki Arie¹ (1.Osaka Pref. Univ.)

Session information

[16a-A33-1~9] 17.2 Graphene

[16a-A33-1] Direct growth of high-quality graphene on sapphire substrate by two-step non-catalyst CVD

△ [16a-A33-2] Dominant Factors of Nucleation in CVD Growth of Graphene on a Cu Foil Substrate

△ [16a-A33-3] Low-temperature direct-growth of multilayer graphene by precipitation method using crystallized Ni catalyst

[16a-A33-4] Gas ratio effect on graphene crystallinity in graphene synthesis from graphene oxide via plasma

△ [16a-A33-5] Wafer-Scale Growth and High Density Integration of Suspended Graphene Nanoribbons Array

[16a-A33-6] Raman analysis of graphitic restoration from graphene oxide by ¹³C isotope-labeling

[16a-A33-7] Growth of Graphene/3C-SiC(111)/4H-SiC(0001) by a Sublimation Technique

[16a-A33-8] High-quality graphene growth on Si-terminated SiC single-crystalline
thin films by using the hybrid SiC

△ [16a-A33-9] Direct synthesis of graphene heterostructures using carbon isotopes

Authentication

Session information

[16a-A33-1~9] 17.2 Graphene

[16a-A33-1] Direct growth of high-quality graphene on sapphire substrate by two-step non-catalyst CVD

△ [16a-A33-2] Dominant Factors of Nucleation in CVD Growth of Graphene on a Cu Foil Substrate

△ [16a-A33-3] Low-temperature direct-growth of multilayer graphene by precipitation method using crystallized Ni catalyst

[16a-A33-4] Gas ratio effect on graphene crystallinity in graphene synthesis from graphene oxide via plasma

△ [16a-A33-5] Wafer-Scale Growth and High Density Integration of Suspended Graphene Nanoribbons Array

[16a-A33-6] Raman analysis of graphitic restoration from graphene oxide by 13C isotope-labeling

[16a-A33-7] Growth of Graphene/3C-SiC(111)/4H-SiC(0001) by a Sublimation Technique

[16a-A33-8] High-quality graphene growth on Si-terminated SiC single-crystallinethin films by using the hybrid SiC

△ [16a-A33-9] Direct synthesis of graphene heterostructures using carbon isotopes

Authentication

[16a-A33-6] Raman analysis of graphitic restoration from graphene oxide by ¹³C isotope-labeling

[16a-A33-8] High-quality graphene growth on Si-terminated SiC single-crystalline
thin films by using the hybrid SiC