Oral presentation
Joint Session K "Wide bandgap oxide semiconductor materials and devices" » Joint Session K "Wide bandgap oxide semiconductor materials and devices"
Fri. Sep 16, 2016 12:45 PM - 2:15 PM A22 (Main Hall B)
Hiroyuki Nishinaka(Kyoto Inst. of Tech.)
△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above
12:45 PM - 1:00 PM
〇Akihiro Watanabe1, Tomoyuki Kawashima1, Katsuyoshi Washio1 (1.Tohoku Univ.)
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1:00 PM - 1:15 PM
〇Koshi Okita1, Kensuke Minami1, Satomi Teraya1, Shoji Nagaoka3,4, Zenji Yatabe2, Yusui Nakamura1,4 (1.Kumamoto Univ. GSST, 2.Kumamoto Univ. POIE, 3.Kumamoto IRI, 4.Phoenics)
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1:15 PM - 1:30 PM
〇Naotoshi Hosaka1, Hiroshi Chiba1,2, Tomoyuki Kawashima1, Katsuyoshi Washio1 (1.Tohoku Univ., 2.JSPS Research Fellow)
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1:30 PM - 1:45 PM
〇Hiroshi Chiba1,2, Naotoshi Hosaka1, Tomoyuki Kawashima1, Katsuyoshi Washio1 (1.Tohoku Univ., 2.JSPS Research Fellow)
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1:45 PM - 2:00 PM
〇Takayuki Murayama1, Wataru Kuwagata1, Yoshiyuki Harada1, Kazuto Koike1, Shigehiko Sasa1, Mitsuaki Yano1, Katsuhiko Inaba2, Shintaro Kobayashi2 (1.Osaka Inst. of Tech., NMRC, 2.Rigaku X-ray Res. Lab)
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2:00 PM - 2:15 PM
〇Kei Shigematsu1, Takanori Yamazaki2, Shoichiro Nakao1, Yasushi Hirose1,2, Tetsuya Hasegawa1,2 (1.KAST, 2.Univ. of Tokyo)
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