Oral presentation

[16a-B9-1~15] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Fri. Sep 16, 2016 9:00 AM - 1:00 PM B9 (Exhibition Hall)

Tomoya Konishi(Natl. Inst. of Tech.,Anan Col.), Kohei Miura(Sumitomo Electric)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

△ [16a-B9-1] Effect of annealing on surface roughness of MOVPE-grown Ge layer on vicinal Si

〇Ryo Nakao^1,2, Tsuyoshi Yamamoto¹, Shinji Matsuo^1,2 (1.NTT Device Technology Labs., 2.NTT Nanophotonic Center)

9:15 AM - 9:30 AM

△ [16a-B9-2] GaAsPN p-i-n junctions toward lattice matched III-V/Si tandem solar cells

〇Masaya Goto¹, Keisuke Yamane¹, Kento Sato¹, Kenjiroh Takahashi¹, Hiroto Sekiguchi¹, Hiroshi Okada^1,2, Akihiro Wakahara¹ (1.Toyohashi Tech., 2.Toyohashi Tech. EIIRIS)

9:30 AM - 9:45 AM

△ [16a-B9-3] Analysis of the Ga incorporation mechanism in selectively-grown InGaAs on Si (111)

〇Toma Watanabe¹, Yoshiaki Nakano¹, Masakazu Sugiyama¹ (1.Univ. of Tokyo)

9:45 AM - 10:00 AM

[16a-B9-4] Characterization of GaSb layers grown by MBE on InP substrates

〇Yuichi Kawamura¹, fengquan Shi¹, Kohei Miura², Yasuhiro Iguchi² (1.Osaka Pref. Univ., 2.Sumitomo elec. Ltd.)

10:00 AM - 10:15 AM

[16a-B9-5] Improvement in surface morphology of GaSb buffer layer by 2-step high and low temperature growth

〇Shigekazu Okumura¹, Shuichi Tomabechi¹, Ryo Suzuki¹, Yusuke Matsukura¹, Koji Tsunoda¹, Junichi Kon¹, Hironori Nishino¹ (1.Fujitsu Lab. LTD)

10:15 AM - 10:30 AM

[16a-B9-6] Electrical conductivity of biaxially-strained GaSb

〇Hideki Kishimoto¹, Takuya Hatayama¹, Akira Akaishi¹, Jun Nakamura¹ (1.UEC-Tokyo)

10:30 AM - 10:45 AM

[16a-B9-7] [Young Scientist Presentation Award Speech] High-quality AlInSb growth by metalorganic chemical vapor deposition

〇Akira Yoshikawa¹, Tomohiro Morishita¹, Kazuhiro Nagase¹ (1.Asahi-Kasei)

11:00 AM - 11:15 AM

△ [16a-B9-8] InAs/GaAs Quantum Dots Grown Directly on Si (100) Just Substrates

〇JINKWAN KWOEN¹, Joohang Lee², Takeo Kageyama¹, Katsuyuki Watanabe², Yasuhiko Arakawa^1,2 (1.NanoQuine, Univ. of Tokyo, 2.IIS, Univ. of Tokyo.)

11:15 AM - 11:30 AM

[16a-B9-9] MBE Growth of 3μm-Light-Emitting InAsSb Quantum Nanostructures on InP Substrates

〇(M2)Daishi Nagai¹, Kaito Togawa¹, Koichi Yamaguchi¹ (1.UEC)

11:30 AM - 11:45 AM

[16a-B9-10] Broadband control of polarization characteristics in closely-stacked InAs/GaAs quantum dots by growth temperature and thickness of GaAs spacer layer

〇Toshiyuki Kaizu^1,2, Yusuke Tajiri¹, Takashi Kita¹ (1.Grad. Sch. of Eng., Kobe Univ.., 2.CSREA, Kobe Univ.)

11:45 AM - 12:00 PM

▼ [16a-B9-11] Novel Structural Designs for Engineering Terahertz Emitting Resonant Tunnelling Diodes

〇(DC)Razvan Baba¹, Kristof J.P. Jacobs², Benjamin J. Stevens², Toshikazu Mukai³, Richard A. Hogg¹ (1.Univ. Glasgow, 2.Univ. Sheffield, 3.ROHM Co Ltd)

12:00 PM - 12:15 PM

[16a-B9-12] Observation of strain variation due to quantum dots by terahertz wave emission

〇Osamu Kojima¹, Ryo Izumi¹, Takashi Kita¹ (1.Kobe Univ.)

12:15 PM - 12:30 PM

[16a-B9-13] Theoretical investigations for strain relaxation and growth mode of InAs/GaAs(111)A

〇Tomonori Ito¹, Toru Akiyama¹, Kohji Nakamura¹ (1.Mie Univ.)

12:30 PM - 12:45 PM

[16a-B9-14] Theoretical study for growth mode with surface energy of InAs/GaAs(001)

〇RYO KAIDA¹, TORU AKIYAMA¹, KOHJI NAKAMURA¹, TOMONORI ITO¹ (1.Mie univ.)

12:45 PM - 1:00 PM

[16a-B9-15] Size Evolution of InGaAs Surface Reconstructed Areas during MBE Growth

〇Tomoya Konishi¹, Shiro Tsukamoto¹, Tomonori Ito², Toru Akiyama², Ryo Kaida² (1.NIT, Anan Col., 2.Mie Univ.)

Poster presentation

[15a-P11-1~13] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Thu. Sep 15, 2016 9:30 AM - 11:30 AM P11 (Exhibition Hall)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

+Add all to schedule

9:30 AM - 11:30 AM

[15a-P11-1] Lattice relaxation mechanism during the growth of InGaAs/InAs/GaAs(111)A

〇Takaaki Mano¹, Kazutaka Mitsuishi¹, Akihiro Ohtake¹, Neul Ha¹, Andrea Castellano^1,2, Stefano Sanguinetti², Takeshi Noda¹, Yoshiki Sakuma¹, Takashi Kuroda¹, Kazuaki Sakoda¹ (1.NIMS, 2.Univ. Milano BIcocca)

9:30 AM - 11:30 AM

[15a-P11-2] Effect of nitrogen doping on electronic states of wurtzite GaAs

Kenta Nakamoto¹, 〇Masato Morifuji¹, Masahiko Kondow¹ (1.Osaka Univ.)

9:30 AM - 11:30 AM

[15a-P11-3] Effects of Ga deposition rate and antimony flux on morphology of GaSb quantum dots

〇Takuya Kawazu¹, Takeshi Noda¹, Sakuma Yoshiki¹ (1.NIMS)

9:30 AM - 11:30 AM

[15a-P11-4] 3-dimensional island growth of InAs on InAsSb/GaAs(001) and their PL properties

〇(M1)Shingo Oikawa¹, Akinori Makaino¹, Tomah Sogabe², Koichi Yamaguchi¹ (1.UEC, 2.i-PERC UEC)

9:30 AM - 11:30 AM

[15a-P11-5] Influence of GaAs capping process on InAs-QDs grown using As₂molecular

〇yuma hayashi¹, Nobuhiko Ozaki¹, Shunsuke Ohkouchi², Naoki Ikeda³, Yoshimasa Sugimoto³ (1.Wakayama Univ., 2.NEC, 3.NIMS)

9:30 AM - 11:30 AM

[15a-P11-6] Analysis of quantum efficiency improvement in spin-polarized photocathode

〇Xiuguang Jin¹, Shunsuke Ohki², Tomoki Ishikawa², Atsushi Tackeuchi², Yosuke Honda¹ (1.KEK, 2.Waseda Univ.)

9:30 AM - 11:30 AM

[15a-P11-7] Barrier material dependence of crystal quality of mid infrared InAsSb quantum wells

〇Keita Yoshimoto¹, Yuya Yamagata¹, Yuga Imamura¹, Masakazu Arai¹ (1.Univ. of Miyazaki)

9:30 AM - 11:30 AM

[15a-P11-8] Fabrication of InGaP solar cells grown on GaAs vicinal substrates by MBE

〇(M1)Yuki Nagato^1,2, Ryuji Oshima², Takeyoshi Sugaya², Yoshinobu Okano¹ (1.TCU, 2.AIST)

9:30 AM - 11:30 AM

[15a-P11-9] Unique PL characteristics of high Bi content in GaAs_1-xBi_x

〇Yusuke Shibata¹, Hideki Kuruma¹, Ryo Yoshioka¹, Hiroyuki Nishinaka¹, Masahiro Yoshimoto¹ (1.Kyoto Inst. of Tech.)

9:30 AM - 11:30 AM

[15a-P11-10] Evaluation of localized level of low-temperature-grown In_xGa_1-xAs on InP substrate

〇(M1)Shunsuke Tsurisaki¹, Yoriko Tominaga¹, Yutaka Kadoya¹ (1.AdSM, Hiroshima Univ.)

9:30 AM - 11:30 AM

[15a-P11-11] Effect of laser irradiation on the luminescence efficiency of GaInNAs alloy

〇(M1)Seiichi Yonekura¹, Kengo Takamiya¹, Shuhei Yagi¹, Osamu Ueda², Hiroyuki Yaguchi¹ (1.Saitama Univ., 2.K.I.T.)

9:30 AM - 11:30 AM

[15a-P11-12] Effects of Annealing on Resistivity of Si-doping GaAsN Films Grown by Atomic Layer Epitaxy

〇yuki yokoyama¹, Masaru Horikiri¹, Tomohiro Haraguchi¹, Toshihiro Yamauchi¹, Hidetoshi Suzuki¹, Tetsuo Ikari¹, Atsuhiko Fukuyama¹ (1.Univ. of Miyazaki)

9:30 AM - 11:30 AM

[15a-P11-13] Sublattice Reversal in GaAs/Ge/GaAs (113)B Heterostructures Grown by MBE

〇Xiangmeng Lu¹, Hiroto Ota¹, Naoto Kumagai¹, Takahiro Kitada¹, Toshiro Isu¹ (1.Tokushima Univ.)

Sessions

15 Crystal Engineering » 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[16a-B9-1~15] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

△ [16a-B9-1] Effect of annealing on surface roughness of MOVPE-grown Ge layer on vicinal Si

△ [16a-B9-2] GaAsPN p-i-n junctions toward lattice matched III-V/Si tandem solar cells

△ [16a-B9-3] Analysis of the Ga incorporation mechanism in selectively-grown InGaAs on Si (111)

[16a-B9-4] Characterization of GaSb layers grown by MBE on InP substrates

[16a-B9-5] Improvement in surface morphology of GaSb buffer layer by 2-step high and low temperature growth

[16a-B9-6] Electrical conductivity of biaxially-strained GaSb

[16a-B9-7] [Young Scientist Presentation Award Speech] High-quality AlInSb growth by metalorganic chemical vapor deposition

△ [16a-B9-8] InAs/GaAs Quantum Dots Grown Directly on Si (100) Just Substrates

[16a-B9-9] MBE Growth of 3μm-Light-Emitting InAsSb Quantum Nanostructures on InP Substrates

[16a-B9-10] Broadband control of polarization characteristics in closely-stacked InAs/GaAs quantum dots by growth temperature and thickness of GaAs spacer layer

▼ [16a-B9-11] Novel Structural Designs for Engineering Terahertz Emitting Resonant Tunnelling Diodes

[16a-B9-12] Observation of strain variation due to quantum dots by terahertz wave emission

[16a-B9-13] Theoretical investigations for strain relaxation and growth mode of InAs/GaAs(111)A

[16a-B9-14] Theoretical study for growth mode with surface energy of InAs/GaAs(001)

[16a-B9-15] Size Evolution of InGaAs Surface Reconstructed Areas during MBE Growth

[15a-P11-1~13] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[15a-P11-1] Lattice relaxation mechanism during the growth of InGaAs/InAs/GaAs(111)A

[15a-P11-2] Effect of nitrogen doping on electronic states of wurtzite GaAs

[15a-P11-3] Effects of Ga deposition rate and antimony flux on morphology of GaSb quantum dots

[15a-P11-4] 3-dimensional island growth of InAs on InAsSb/GaAs(001) and their PL properties

[15a-P11-5] Influence of GaAs capping process on InAs-QDs grown using As₂molecular

[15a-P11-6] Analysis of quantum efficiency improvement in spin-polarized photocathode

[15a-P11-7] Barrier material dependence of crystal quality of mid infrared InAsSb quantum wells

[15a-P11-8] Fabrication of InGaP solar cells grown on GaAs vicinal substrates by MBE

[15a-P11-9] Unique PL characteristics of high Bi content in GaAs_1-xBi_x

[15a-P11-10] Evaluation of localized level of low-temperature-grown In_xGa_1-xAs on InP substrate

[15a-P11-11] Effect of laser irradiation on the luminescence efficiency of GaInNAs alloy

[15a-P11-12] Effects of Annealing on Resistivity of Si-doping GaAsN Films Grown by Atomic Layer Epitaxy

[15a-P11-13] Sublattice Reversal in GaAs/Ge/GaAs (113)B Heterostructures Grown by MBE

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