Oral presentation

[16a-A35-1~10] 3.13 Semiconductor optical devices

Fri. Sep 16, 2016 9:00 AM - 11:45 AM A35 (303-304)

Shiro Uchida(Chiba Inst. of Tech.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[16a-A35-1] Investigation of thermal electron-escape process in InAs/GaAs quantum dot solar cells

〇Kazuki Hirao¹, Sho Watanabe¹, Shigeo Asahi¹, Toshiyuki Kaizu¹, Yukihiro Harada¹, Takashi Kita¹ (1.Kobe univ.)

9:15 AM - 9:30 AM

[16a-A35-2] Observation of long electron lifetime in Dot-in-well intermediate band solar cells

〇Haruyuki Teranishi¹, Shigeo Asahi¹, Toshiyuki Kaizu¹, Takashi Kita¹ (1.Kobe Univ.)

9:30 AM - 9:45 AM

[16a-A35-3] Control of Photoluminescence Polarization of InAs Nanowire Quantum Dot Using Phase Change Material

〇Ariyosi Yamamura¹, Kei Yamaguti¹, Chauvin Nicolas², Gendry Michel³, Tosiharu Saiki¹ (1.Keio Univ., 2.INSA-Lyon, 3.Ecole Centrale de Lyon)

9:45 AM - 10:00 AM

▲ [16a-A35-4] Semiconductor Core Optical Fibers for Mid-IR Transmission

〇(D)Mustafa Ordu¹, Jicheng Guo¹, Boyin Tai¹, Shyamsunder Erramilli¹, Siddharth Ramachandran¹, Soumendra Basu¹ (1.Boston Univ.)

10:00 AM - 10:15 AM

[16a-A35-5] Improvement of dark current in c-Se-based photodiode by reducing the thickness of adhesion layer

〇Shigeyuki Imura¹, Keitada Mineo¹, Honda Yuki¹, Hagiwara Kei¹, Watabe Toshihisa¹, Miyakawa Kazunori¹, Namba Masakazu¹, Ohtake Hiroshi¹, Kubota Misao¹ (1.NHK STRL)

10:30 AM - 10:45 AM

[16a-A35-6] Si photodiode fabricated by laser doping using boron doped Si ink for spectra sensitivity control

〇Yu Kimura¹, Yoshinori Ikeda¹, Takashi Shiro^1,2 (1.TEIJIN LIMITED, 2.NanoGram Corporation)

10:45 AM - 11:00 AM

[16a-A35-7] Effect of initial stage of Ge growth on dark leakage current in Ge photodiodes on Si

〇(M1)Kazuki Ito¹, Yuji Miyasaka¹, Yasuhiko Ishikawa¹ (1.Univ. of Tokyo)

11:00 AM - 11:15 AM

[16a-A35-8] The Infrared Spectral Imaging of Mineral by Quantum Dot Array Sensor

〇Chenhui Huang¹, Tomo Tanaka¹, Sota Kagami^1,4, Yoshiki Ninomiya², Masahiro Kakuda⁴, Katsuyuki Watanabe⁵, Sei Inoue³, Kenji Nanba³, Yuichi Igarashi^1,4, Masahiro Tanomura¹, Yoshihiro Nambu^1,4, Tsuyoshi Yamamoto^1,4, Akinobu Shibuya¹, Shin-ichi Yorozu^1,4, Yasuhiko Arakawa^4,5 (1.NEC ID Labs, 2.AIST, 3.NEC MI Division, 4.NanoQuine, 5.IIS Univ. of Tokyo)

11:15 AM - 11:30 AM

[16a-A35-9] Improvement of Quantum Efficiency of Charge-Sensitive Infrared Phototransistors (CSIP) due to Backside Illumination

〇Sunmi Kim¹, Susumu Komiyama^2,3, Mikhail Patrashin³, Kuan-Ting Lin¹, Hirofumi Nema¹, Kazuyuki Yamanaka¹, Yusuke Kajihara¹ (1.IIS, Univ. of Tokyo, 2.Dept. Basic Sci., Univ. of Tokyo, 3.NICT)

11:30 AM - 11:45 AM

[16a-A35-10] Fabrication and characterization of optical phased arrays integrated on InP

〇Kento Komatsu¹, Masaharu Fukuda¹, Takuo Tanemura¹, Yoshiaki Nakano¹ (1.Univ. of Tokyo)

Oral presentation

[16p-A35-1~9] 3.13 Semiconductor optical devices

Fri. Sep 16, 2016 1:15 PM - 3:30 PM A35 (303-304)

Yasuhiko Ishikawa(Univ. of Tokyo)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:15 PM - 1:30 PM

[16p-A35-1] Application of III-V compound semiconductor solar cell for high-efficiency optical wireless power transmission

Fumiaki Tanaka¹, Toshiki Akiba¹, Takahiro Shouji¹, Pan Dai², Shulong Lu², 〇Shiro Uchida¹ (1.Chiba Inst, 2.Suzhou Inst)

1:30 PM - 1:45 PM

[16p-A35-2] Basic Study of High-Efficiency Optical Power Feeding

〇motoharu tanizawa¹, Syoya Ueda¹, Takeo Maruyama¹ (1.Kanazawa Univ.)

1:45 PM - 2:00 PM

[16p-A35-3] Study on VCSEL array using spontaneous emission for high-efficiency optical wireless power transmission

〇Yoshihisa Suda¹, Tomoyuki Miyamoto¹ (1.FIRST, Tokyo Institute of Technology)

2:00 PM - 2:15 PM

[16p-A35-4] Numerical analysis of multi transverse mode of the phase locked VCSEL array using Talbot effect

〇Yuki Komori¹, Tomoyuki Miyamoto¹ (1.FIRST, Tokyo Tech)

2:15 PM - 2:30 PM

[16p-A35-5] Temperature dependence of two-color surface emitting lasers using a coupled cavity

〇(M2)Hiroto Ota¹, Xiangmeng Lu¹, Naoto Kumagai², Takahiro Kitada¹, Toshiro Isu¹ (1.Tokushima Univ., 2.AIST)

2:30 PM - 2:45 PM

[16p-A35-6] Amplification characteristics of VCSEL-Based High Resolution Wavelength Demultiplexer

〇Masanori Nakahama¹, Xiaodong Gu¹, Akihiro Matsutani², Takahiro Sakaguchi¹, Fumio Koyama¹ (1.FIRST, Tokyo Tech., 2.Tokyo Tech.)

2:45 PM - 3:00 PM

[16p-A35-7] Wave chaotic modes in a Penrose unilluminable room cavity

〇Takehiro Fukushima¹, Koichiro Sakaguchi¹, Yasunori Tokuda¹ (1.Okayama Pref. Univ.)

3:00 PM - 3:15 PM

[16p-A35-8] 25Gbit/s 1000 m SMF transmission using a Fabry-Perot quantum dot laser

〇Nobuaki Hatori¹, Seok-hwan Jeong¹, Yu Tanaka¹ (1.PETRA)

3:15 PM - 3:30 PM

[16p-A35-9] Development of broadband QD ridge-waveguide laser diode in 1.0μm

〇Katsumi Yoshizawa¹, Yoshinori Sawado¹, Kouichi Akahane², Naokatsu Yamamoto² (1.PIONEER MTC, 2.NICT)

Poster presentation

[15a-P6-1~6] 3.13 Semiconductor optical devices

Thu. Sep 15, 2016 9:30 AM - 11:30 AM P6 (Exhibition Hall)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:30 AM - 11:30 AM

[15a-P6-1] InGaAs-InGaAsN multiple quantum wells for broad band width SLD for optical sensing

〇Yuga Imamura¹, Masaya Kamikado¹, Masakazu Arai¹ (1.Univ. of Miyazaki)

9:30 AM - 11:30 AM

[15a-P6-2] Mid-infrared quantum cascade laser integrated with high-reflective distributed Bragg reflector (DBR)

〇Hiroyuki Yoshinaga¹, Makoto Murata¹, Yukihiro Tsuji¹, Hiroki Mori¹, Manabu Shiozaki¹, Jun-ichi Hashimoto¹, Mitsuru Ekawa¹, Yasuhiro Iguchi¹, Tsukuru Katsuyama¹ (1.Sumitomo Electric Industries, LTD.)

9:30 AM - 11:30 AM

[15a-P6-3] Investigation for Q factor improvement of wavelength-scale metallic cavity coupled to waveguide

〇(PC)Masaya Nishimoto¹, Kaiyin Feng¹, Takuo Tanemura¹, Yoshiaki Nakano¹ (1.Univ. of Tokyo)

9:30 AM - 11:30 AM

[15a-P6-4] Fabrication of transparent ZnO/NiO solar cells

〇Hirofumi Naganuma¹, Kazuya Sato¹, Zhao Xinwei¹, Syuuji Komuro² (1.Tokyo Univ. of Sci., 2.Toyo Univ.)

9:30 AM - 11:30 AM

[15a-P6-5] Investigation of bandwidth of membrane photodetector using slow light effect

〇ZhiChen Gu¹, Daisuke Inoue¹, Takuo Hiratani¹, Tomohiro Amemiya^1,2, Nobuhiko Nishiyama^1,2, Shigehisa Arai^1,2 (1.Tokyo Tech., 2.IIR)

9:30 AM - 11:30 AM

[15a-P6-6] Improve of dark current characteristics of CMOS APD by circle layout

〇(B)Keito Hachiga¹, Akiyama Masahiro¹ (1.NIT)

Sessions

3 Optics and Photonics » 3.13 Semiconductor optical devices

[16a-A35-1~10] 3.13 Semiconductor optical devices

[16a-A35-1] Investigation of thermal electron-escape process in InAs/GaAs quantum dot solar cells

[16a-A35-2] Observation of long electron lifetime in Dot-in-well intermediate band solar cells

[16a-A35-3] Control of Photoluminescence Polarization of InAs Nanowire Quantum Dot Using Phase Change Material

▲ [16a-A35-4] Semiconductor Core Optical Fibers for Mid-IR Transmission

[16a-A35-5] Improvement of dark current in c-Se-based photodiode by reducing the thickness of adhesion layer

[16a-A35-6] Si photodiode fabricated by laser doping using boron doped Si ink for spectra sensitivity control

[16a-A35-7] Effect of initial stage of Ge growth on dark leakage current in Ge photodiodes on Si

[16a-A35-8] The Infrared Spectral Imaging of Mineral by Quantum Dot Array Sensor

[16a-A35-9] Improvement of Quantum Efficiency of Charge-Sensitive Infrared Phototransistors (CSIP) due to Backside Illumination

[16a-A35-10] Fabrication and characterization of optical phased arrays integrated on InP

[16p-A35-1~9] 3.13 Semiconductor optical devices

[16p-A35-1] Application of III-V compound semiconductor solar cell for high-efficiency optical wireless power transmission

[16p-A35-2] Basic Study of High-Efficiency Optical Power Feeding

[16p-A35-3] Study on VCSEL array using spontaneous emission for high-efficiency optical wireless power transmission

[16p-A35-4] Numerical analysis of multi transverse mode of the phase locked VCSEL array using Talbot effect

[16p-A35-5] Temperature dependence of two-color surface emitting lasers using a coupled cavity

[16p-A35-6] Amplification characteristics of VCSEL-Based High Resolution Wavelength Demultiplexer

[16p-A35-7] Wave chaotic modes in a Penrose unilluminable room cavity

[16p-A35-8] 25Gbit/s 1000 m SMF transmission using a Fabry-Perot quantum dot laser

[16p-A35-9] Development of broadband QD ridge-waveguide laser diode in 1.0μm

[15a-P6-1~6] 3.13 Semiconductor optical devices

[15a-P6-1] InGaAs-InGaAsN multiple quantum wells for broad band width SLD for optical sensing

[15a-P6-2] Mid-infrared quantum cascade laser integrated with high-reflective distributed Bragg reflector (DBR)

[15a-P6-3] Investigation for Q factor improvement of wavelength-scale metallic cavity coupled to waveguide

[15a-P6-4] Fabrication of transparent ZnO/NiO solar cells

[15a-P6-5] Investigation of bandwidth of membrane photodetector using slow light effect

[15a-P6-6] Improve of dark current characteristics of CMOS APD by circle layout

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