[13a-A23-1~7] 6.1 Ferroelectric thin films

[13a-A23-1] High Temperature XRD Analysis of In-Plane Strain for c-Axis Oriented PMnN-PZT Epitaxial Fast-Cooled Thin Film on Si Substrate.

〇Shinya Yoshida¹, Shuji Tanaka¹ (1.Tohoku Univ.)

Keywords:Lead zirconate titanate (PZT), Piezoelectric MEMS, Curie temperature

Recently, we found out Pb(Mn,Nb)O₃-Pb(Zr,Ti)O₃ (PMnN-PZT) epitaxial thin films with the thicknesses of a few micrometers prepared by sputter deposition with fast cooling exhibit both high Curie temperature (Tc) of 550~600^oC and large piezoelectricity, e_31,f = -14 C/m². This Tc value is 150~200^oC higher than the bulk ceramics. The application possibility of giant piezoelectric materials, of which Tc are normally very low, would be expanded by utilizing this Tc enhancement phenomenon. In this study, we investigated the Tc enhancement mechanism by analyzing dependencies of the lattice parameters in the PMnN-PZT epitaxial thin film and bulk ceramics on temperature by high temperature X-ray diffraction.