[13a-A31-1~11] 6.3 Oxide electronics

[13a-A31-2] Strain-induced resistance change in a V₂O₃ film transferred on a piezoelectric device

〇Joe Sakai¹, Beatrice Negulescu¹, Maxime Bavencoffe¹, Patrice Limelette¹, Jerome Wolfman¹, Hiroshi Funakubo² (1.GREMAN, Univ. Tours, 2.Tokyo Tech.)

Keywords:V2O3, strain-induced resistance change, piezoelectric effect

We deposited a c-axis oriented V₂O₃ thin film by PLD on a mica substrate, peeled it off by a Scotch tape method, and pasted it onto a piezoelectric transducer, in order to observe the resistance modulation of a substrate-free V₂O₃ thin film by the piezoelectric effect. We measured the resistance of the V₂O₃ layer, R_V2O3, as a function of the dc voltage V_piezo applied to the piezo layer. In a narrow region of V_piezo, R_V2O3 increased as V_piezo increased, suggesting that c/a ratio of the film was lowered by the in-plane tensile strain of the piezo layer. When we scanned V_piezo for a wider region, the R_V2O3–V_piezo property showed an asymmetric butterfly-type curve accompanied by a memory effect, which is the non-volatile switching between two values according to the history of V_piezo.