[13a-A31-1~11] 6.3 Oxide electronics

[13a-A31-5] Formation of Separate Phonon by Local Impurity Doping to VO₂ Thin Films

〇Takeaki Yajima¹, Tomonori Nishimura¹, Akira Toriumi¹ (1.The Univ. of Tokyo)

Keywords:metal-insulator transition, Raman spectroscopy

In a typical metal-insulator transition material, VO₂, the local impurity doping resulted in the phonon which was seperated from the surrounding non-doped region. This result indicates a relatively weak phonon coupling between different resions across the interface, providing critical information for designing nanodevices with metal-insulator transition materials.