Theoretical Study of Resistive Switching Mechanism for Polycrystalline Transition Metal Oxides

Presentation information

Oral presentation

6 Thin Films and Surfaces » 6.3 Oxide electronics

Tue. Sep 13, 2016 9:00 AM - 11:45 AM A31 (302A)

11:00 AM - 11:15 AM

〇(D)Takumi Moriyama¹, Takahiro Yamasaki², Sohta Hida¹, Takahisa Ohno², Satoru Kishida^1,3, Kentaro Kinoshita^1,3 (1.Tottori Univ., 2.NIMS, 3.TiFREC)

Keywords:ReRAM, first-principles calculation, grain boundaries