[13a-C42-1~8] 9.3 Nanoelectronics

[13a-C42-1] Explanation of pump operation of common-gate triple-dot single-electctron devices

〇Reon Takanoya¹, Shigeru Imai¹ (1.Ritsumeikan Univ.)

Keywords:Nano-devices

The condition for pump operation in common-gate triple-dot single-electron devices with three asymmetric gate capacitances is investigated. Here, the source-side gate capacitance is 20% larger than the drain-side capacitance. When the gate voltage is increased, an electron transfers from the source to the dots. When the gate voltage is decreased, an electron is transferred toward the source in case that the transferred electron is located in the middle dot. On the contrary, in the case that the transferred electron and the other one are located in the both-ends dots, the electron transfers to the drain. On the latter case, pump operation can occur in the device.