[13p-A21-1~16] 15.4 III-V-group nitride crystals

[13p-A21-16] Epitaxial Growth of Low Pressure HVPE GaN@GaCl3on Sapphire,
AlN@AlCl3 on Si(111) by Vertical Batch Furnace System

〇Kota Umezawa¹ (1.TTL)

Keywords:Low Pressure HVPE

GaN Epitaxial growth tool is developed based on vertical batch furnace. (4” 50wafers processing)
Process is Low Pressure HVPE, growth rate is 2-10um/h, low impurity GaN Epi growth is possible.
And the tool has low NH3 usage and capability of in-situ Dry Cleaning as a feature