The 77th JSAP Autumn Meeting, 2016

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Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[13p-A21-1~16] 15.4 III-V-group nitride crystals

Tue. Sep 13, 2016 1:15 PM - 6:00 PM A21 (Main Hall A)

Tsutomu Araki(Ritsumeikan Univ.), Munetaka Arita(Univ. of Tokyo), Hisashi Murakami(TUAT)

2:00 PM - 2:15 PM

[13p-A21-3] Development of n-type doping technique for GaN by pulsed sputtering

〇Kohei Ueno1, Yasuaki Arakawa1, Hideyuki Imabeppu1, Atsushi Kobayashi1, Jitsuo Otha1,2, Hiroshi Fujioka1,3 (1.IIS, The Univ. of Tokyo, 2.JST-PRESTO, 3.JST-ACCEL)

Keywords:GaN, Sputtering