The 77th JSAP Autumn Meeting, 2016

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Symposium (Oral)

Symposium » Toward future applications of oxides electronics; past, present and future

[13p-A22-1~5] Toward future applications of oxides electronics; past, present and future

Tue. Sep 13, 2016 1:15 PM - 6:15 PM A22 (Main Hall B)

Hiroyuki Akinaga(AIST), Toshiyuki Kawaharamura(Kochi Univ. of Tech.)

1:15 PM - 2:15 PM

[13p-A22-1] Why a-IGZO TFT is used for mass production

〇Toshio Kamiya1, Hideo Hosono1 (1.Tokyo Inst. of Tech.)

Keywords:Amorphous Oxide Semiconductor, Thin-Film Transistor, Mass Production

Amorphous oxide semiconductor (AOS) thin-film transistor (TFT) was first reported in 2004, and Sharp succeeded in mass production for flat-panel displays in 2012. This is the first case for oxides that an oxide is mass produced as an active layer of a semiconductor device. In this paper, we like to review and discuss why AOS is successuflly used for practical devices in comparison with other oxide and related materials and technologies.